?004 fairchild semiconductor corporation j une 2004 RMWD38001 rev. c RMWD38001 RMWD38001 37?0 ghz driver amplifier mmic general description the RMWD38001 is a 4-stage gaas mmic amplifier designed as a 37 to 40 ghz driver amplifier for use in point to point and point to multi-point radios, and various communications applications. in conjunction with other fairchild semiconductor amplifiers, multipliers and mixers it forms part of a complete 38 ghz transmit/receive chipset. the RMWD38001 utilizes our 0.25? power phemt process and is sufficiently versatile to serve in a variety of applications, such as a driver amplifier or a frequency multiplier. features ? mil substrate small-signal gain 25db (typ.) 1db compressed pout 18dbm (typ.) voltage detector included to monitor pout chip size 3.0mm x 1.2mm absolute ratings symbol parameter ratings units vd positive dc voltage (+4v typical) +6 v vg negative dc voltage -2 v vdg simultaneous (vd?g) 8 v i d p ositive dc current 173 ma p in rf input power (from 50 ? source) +8 dbm t c operating baseplate temperature -30 to +85 ? t stg storage temperature range -55 to +125 ? r jc thermal resistance (channel to backside) 126 ?/w device
?004 fairchild semiconductor corporation RMWD38001 rev. c RMWD38001 electrical characteristics (at 25?), 50 ? system, vd = +4v, quiescent current (idq) = 105ma note: 1: typical range of negative gate voltages is -0.7 to -0.1v to set typical idq of 105ma. p arameter min typ max units f requency range 37 40 ghz gate supply voltage 1 (vg) -0.4 v gain small signal at pin = -10dbm 21 25 db gain variation vs. frequency 2 db gain at 1db compression 24 db po w er output at 1dbm compression 18 dbm po w er output saturated: pin = -5.5dbm 15.5 19 dbm drain current at pin = -10dbm 105 ma drain current at 1db compression 120 ma drain current at saturated: pin = -5.5dbm 120 ma po w er added ef?iency (pae): at p1db 13 % input return loss (pin = -10dbm) 15 db output return loss (pin = -10dbm) 9 db oip3 28 dbm noise figure 6 db detector voltage (pout = +17dbm) 0.1 v
?004 fairchild semiconductor corporation RMWD38001 rev. c RMWD38001 application information caution: this is an esd sensitive device. chip carrier material should be selected to have gaas compatible thermal coefficient of expansion and high thermal conductivity such as copper molybdenum or copper tungsten. the chip carrier should be machined, finished flat, plated with gold over nickel and should be capable of withstanding 325? for 15 minutes. die attachment should utilize gold/tin (80/20) eutectic alloy solder and should avoid hydrogen environment for phemt devices. note that the backside of the chip is gold plated and is used as rf ground. these gaas devices should be handled with care and stored in dry nitrogen environment to prevent contamination of bonding surfaces. these are esd sensitive devices and should be handled with appropriate precaution including the use of wrist grounding straps. all die attach and wire/ribbon bond equipment must be well grounded to prevent static discharges through the device. recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical allowing for appropriate stress relief. the rf input and output bonds should be typically 0.012" long corresponding to a typical 2 mil gap between the chip and the substrate material. figure 1. functional block diagram figure 2. chip layout and bond pad locations (chip size is 3.0mm x 1.2mm x 1.2mm. back of chip is rf and dc ground) mmic chip drain supply vd1 rf out rf in ground (back of the chip) drain supply vd2 drain supply vd3 gate supply vg output power detector voltage vdet drain supply vd4 note: detector delivers 0.1v dc into 3k ? load resistor for > +17dbm output power. if output power level detection is not desired, do not make connection to detector bond pad. dimensions in mm 0.0 0.0 0.0 0.0 3.0 3.0 1.2 1.2 0.863 0.707 0.398 0.552 0.8895 2.629 2.1305 1.33675 0.707 0.398 0.552
?004 fairchild semiconductor corporation RMWD38001 rev. c RMWD38001 rf out drain supply vd = +4v gate supply vg output power detector voltage vdet ground (back of chip) mmic chip l = bond wire inductance rf in l 100pf 100pf 10,000pf l 100pf 100pf 10,000pf l l lll l l l 100pf 3k ? l l l 1 00pf note: detector delivers 0.1 v dc into 3k ? load resistor for >+17 dbm output power. if output power level detection is not desired, do not make connection to detector bond pad. figure 3. recommended application schematic circuit diagram figure 4. recommended assembly diagram note: use 0.003" by 0.0005" gold ribbon for bonding. rf input and output bonds should be less than 0.015?long with stress relief. detector delivers 0.1v dc into 3k ? load resistor for >+17dbm output power. if output power level detection is not desired, do not make connection to detector bond pad 100pf 3k ? 100pf 100pf 100pf 100pf 100pf 10000pf 10000pf die-attach 80au/20sn vdd (positive) vg (negative) 2 mil gap detector voltage l < 0.015" (4 places) rf output rf input 5 mil thick alumina 50 ? 5 mil thick alumina 50 ?
?004 fairchild semiconductor corporation RMWD38001 rev. c RMWD38001 recommended procedure for biasing and operation caution: loss of gate voltage (vg) while drain voltage (vd) is present may damage the amplifier chip. the following sequence of steps must be followed to properly test the amplifier: step 1: turn off rf input power. step 2: connect the dc supply grounds to the ground of the chip carrier. slowly apply negative gate bias supply voltage of -1.5v to vgs. step 3: slowly apply positive drain bias supply voltages of +4v to vd. step 4: adjust gate bias voltage to set the quiescent current of idq = 105ma. step 5: after the bias condition is established, the rf input signal may now be applied at the appropriate frequency band. step 6: follow turn-off sequence of: (i) turn off rf input power, (ii) turn down and off drain voltage (vd), (iii) turn down and off gate bias voltage (vg).
?004 fairchild semiconductor corporation RMWD38001 rev. c RMWD38001 -60 -50 -40 -30 -20 -10 0 10 20 30 01020304050 s21 ( s11, s22 (db) gain (db) output power (dbm) db) -35 -30 -25 -20 -15 -10 -5 0 5 10 s21 s22 s11 22 23 24 25 26 27 28 29 -20 -15 -10 -5 6 8 10 12 14 16 18 20 gain @ 37ghz gain @ 38ghz gain @ 39ghz gain @ 40ghz pout @ 37ghz pout @ 38ghz pout @ 39ghz pout @ 40gh z RMWD38001, 37?0ghz driver amplifier, typical performance, vd = 4v, idq = 105ma, chip bonded into 50 ? test fixture RMWD38001, 37?0ghz driver amplifier, typical performance, on-wafer measurements, vd = 4v, idq = 105ma frequency (ghz) input power (ghz) gain (db) oip3 (dbm) pout at 1db compression (dbm) RMWD38001, 37?0ghz driver amplifier, typical performance, on-wafer measurements, vd = 4v, idq = 80 and 105ma RMWD38001, 37?0ghz driver amplifier, typical intermodulation performance, vd = 4v, idq = 105ma, chip bonded into 50 ? test fixture tone spacing 1mhz, pout per tone +6dbm approx. frequency (ghz) gain (db) output power at 1db compression (dbm) RMWD38001, typical performance over temperature, vd = 4v, idq = 105ma, chip bonded into 50 ? test fixture RMWD38001, typical performance over temperature, vd = 4v, idq = 105ma, chip bonded into 50 ? test fixture frequency (ghz) frequency (ghz) frequency (ghz) 20 22 24 26 28 30 34 35 36 37 38 39 4 0 41 10 12 14 16 18 20 gain - 105ma gain - 80ma p1db - 105ma p1db - 80m a 24 26 28 30 32 34 37 37.5 39 40 38 38.5 39.5 lower product upper product 20 22 24 26 28 30 32 36 37 38 39 40 41 + 28.5 c -23 c + 75.5 c -23 c + 75.5 c +28.5 c 15 16 17 18 19 20 36 37 38 39 40 41 + 28.5 c -23 c + 75.5 c -23 c + 75.5 c +28. 5 c typical characteristics
disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. trademarks the following are registered and unregistered trademarks fairchild semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used herein: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. a critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms datasheet identification product status definition advance information preliminary no identification needed obsolete this datasheet contains the design specifications for product development. specifications may change in any manner without notice. this datasheet contains preliminary data, and supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice in order to improve design. this datasheet contains specifications on a product that has been discontinued by fairchild semiconductor. the datasheet is printed for reference information only. formative or in design first production full production not in production isoplanar? littlefet? microcoupler? microfet? micropak? microwire? msx? msxpro? ocx? ocxpro? optologic ? optoplanar? pacman? pop? fast ? fastr? fps? frfet? globaloptoisolator? gto? hisec? i 2 c? i-lo ? implieddisconnect? rev. i11 acex? activearray? bottomless? coolfet? crossvolt ? dome? ecospark? e 2 cmos? ensigna? fact? fact quiet series? power247? powersaver? powertrench ? qfet ? qs? qt optoelectronics? quiet series? rapidconfigure? rapidconnect? serdes? silent switcher ? smart start? spm? stealth? superfet? supersot?-3 supersot?-6 supersot?-8 syncfet? tinylogic ? tinyopto? trutranslation? uhc? ultrafet ? vcx? across the board. around the world.? the power franchise ? programmable active droop?
|
